Molecular-Beam Epitaxy

Invited Speakers:

  • K. M. Cha, University of  Tokyo, Japan
    Position- and size-controlled growth of InAs QDs and their applications
    to single electron transistors
  • Subhabrata Dhar, Indian Institute of Technology, India
    Molecular beam epitaxy grown random networks of wedge-shaped GaN nanowalls: An interesting material to achieve high electron mobility
  • Shibata Hiroyuki, NTT Basic Research Laboratories, Japan
    MBE growth of MgB2 for superconducting single-photon detector
  • Xinyu Liu, University of Notre Dame, USA
    Growth and development of spin-based nanostructures by molecular beam epitaxy
  • Ying Liu, University of  Wisconsin-Milwaukee, US
    Spiral growth during MBE with and without interfacial dislocations: GaN/SiC versus Bi2Se3/SiC
  • Tomasz Ochalski, Tyndall National Institute, Ireland
    Optical emission of a strained direct band-gap Ge quantum well embedded inside InGaAs alloy layers
  • Hui-Qiong Wang, Xiamen University, China
    Controllable fabrication of polar and non-polar ZnO planes by molecular beam epitaxy

Workshop Chairs:

  • Tao Yang, Institute of Semiconductors CAS, China

Workshop Assistants:

  • Lina Wan, Institute of Semiconductors CAS, China
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Operating Organization

OAHOST
Sponsors
ISCAS
UARK

Springer