Nanovolatile Memories

Invited Speakers:

  • Albert Chin, National Chiao Tung University, Taiwan
    High-k Flash Memory
  • Shi-Jin Ding, Fudan University, China
    High-Performance Ultraviolet-Erasable InGaZnO TFT Memory Devices with Atomic-Layer- deposited Pt nanocrystals Embedded into Al2O3 Dielectric
  • Takashi Kimura, Kyushu University, Japan
    Generation of large spin current in metallic nanostructures and its application
  • Jong-Ho Lee, Seoul National University, Korea
    Characterization of traps in 3-D stack NAND flash memory with poly-Si body
  • Run-Wei Li, Key Lab of Magnetic Materials and Devices,CAS, China
    Ion Transport and it’s applications in Memory
  • S. Maikap, Chang Gung University, Taiwan
    TaOx Based Nanoscale Resistive Switching Memories
  • Antonio Ruotolo, City University of Hong Kong
    Memristive devices based on magnetic semiconductor oxides
  • Chun-Hsing Shih, National Chi Nan University, Taiwan
    Schottky Barrier Nonvolatile Flash Memories
  • Zhimei Sun, Xiamen University, China
    Understanding chalcogenide phase change materials for nonvolatile memory by density functional theory
  • Roy Vellaisamy, City University of Hong Kong, HK
    Flexible Non-volatile Flash Memories
  • Can Wang, Institute of Physics CAS, China
  • Jer-Chyi WANG, Chang Gung University,Taiwan
    Multilevel Cell Operation of Gadolinium Oxide Resistive Switching Memory
  • Sui-Dong Wang, Soochow University, China
    Charge trapping mechanism in organic nano-floating-gate nonvolatile memories
  • Yung-Hsien Wu, National Tsing Hua University, Taiwan
    Crystalline High-k Dielectrics for Nano Devices
  • Takeshi Yanagida, Osaka University, Japan
    Nanowire Memristor
  • Hao Yu, Nanyang Technological University, Singapore
    Domain-wall Non-volatile Memory based Computing for Big-data Processing

Workshop Chairs:

  • Zhiming M. Wang, Institute of Semiconductors CAS, China

Workshop Assistants:

  • Xingliang Xu, Institute of Semiconductors CAS, China
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