Layered Materials and Devices

Invited Speakers:

  • Matthias Batzill, University of South Florida, USA
    Metal/graphene/dielectric interfaces
  • Kirill  Bolotin, Vanderbilt University, USA
    Tuning electronic and optical properties of monolayer molybdenum disulfide
  • Qiaoliang Bao, FUNSOM, Soochow University, Suzhou, China
    Graphene Photonics and Broadband Optoelectronics
  • Luis Balicas, National High Magnetic Field Lab, Florida State University, USA
    Intrinsic carrier mobility and photoconducting response in WSe2
  • Kai Xiao, Oak Ridge National Laboratory, USA
    Two-Dimensional Semiconducting Chalocogenide Nanosheets for High-Performance Photodetectors
  • Nina Kovtyukhova,Penn State University, USA
    Intercalation chemistry of hexagonal boron nitride
  • Arūnas Krotkus, Optoelectronics Laboratory Center for Physical Sciences and Technology, Lithuania
    TBA
  • Chun Ning (Jeanie) Lau, University of California, Riverside, USA
    TBA
  • Miguel Alonso Pruneda, Theory and Simulation Group, CIN2, Spain
    Polar effects on hybrid honeycomb monolayers
  • Su-Huai Wei, National Renewable Energy Laboratory, USA
    TBA
  • Kang L Wang, University of California, Los Angeles, USA
    MBE growth of BiSe/BiTe and related materials
  • Yong Wang, Zhejiang University, Hangzhou, China
    TBA
  • Jianting Ye, The University of Tokyo,  Japan
    Transistors on Nanosheets Beyond Graphene
  • Shengbai Zhang, Rensselaer Polytechnic Institute, New York, USA
    Defect properties in topological insulators
  • Jin Zou, The University of Queensland, Australia
    TBA
  • Kourosh Kalantar-Zadeh, RMIT University, Melbourne, Australia
    Electronics of two dimensional molybdenum oxides and dichalcogenides

 

 

 

Workshop Chairs:

  • Handong Li, State Key Laboratory of Electronic Thin Films and Integrated Devices, UESTC, China

Workshop Assistants:

  • Haiyuan Chen, State Key Laboratory of Electronic Thin Films and Integrated Devices, UESTC, China
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Springer