Quantum FinFET

Invited Speakers:

  • Hung-Bin Chen, National Chiao Tung University, Taiwan
    Sub-10nm-thick Quantum Wire Gate All-Arround FinFET and Non-Volatile Memory Devices Applications
  • Kazuhiko Endo, Advanced Industrial Science and Technology, Japan
    Advanced FinFET SRAM Technology
  • Yiming Li, National Chiao Tung University, Taiwan
    Fluctuations in Emerging Nano-Device Technologies
  • Yongxun Liu, Nanoelect Res Inst, Japan
    Advanced FinFET Technology and Its Application for Flash Memory
  • Seiji Samukawa, Tohoku University, Japan
    Damage-free Neutral Beam Processes for High Performance Fin Type MOSFET
  • Linjun Wang, University of Science and Technology of China, China
    Single Electron Transitor and Quantum Dots on Graphene
  • Runsheng Wang, Peking University, China
    Recent Advances in Random Telegraph Noise in Multi-gate FinFET/Nanowire
    Devices
  • Chadwin Young, University of Texas at Dallas, USA
    TBA
  • Lining Zhang, The Hong Kong University of Science and Technology,HK
    Modeling FinFETs for their Electronics Applications

Workshop Chairs:

  • Weihua Han,¬†Institute of Semiconductors CAS, China

Workshop Assistants:

  • Lina Wan,¬†Institute of Semiconductors CAS, China
Social Network
Operating Organization

OAHOST
Sponsors
ISCAS
UARK

Springer